Gate-modulated thermopower in disordered nanowires: I. Low temperature coherent regime

Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first paper, we consider the low temperature coherent regime where the electron transmission through the nanowire remains elastic. In the limit where the nanowire length exceeds the electron localization length, we derive three analytical expressions for the typical value of the thermopower as a function of the gate potential, in the cases where the electron transport takes place (i) inside the impurity band of the nanowire, (ii) around its band edges and eventually (iii) outside its band. We obtain a very large enhancement of the typical thermopower at the band edges, while the sample to sample fluctuations around the typical value exhibit a sharp crossover from a Lorentzian distribution inside the impurity band towards a Gaussian distribution as the band edges are approached.Comment: 13 pages, 8 figures, final version as publishe

Scanning Gate Microscopy of Quantum Contacts Under Parallel Magnetic Field: Beating Patterns Between Spin-Split Transmission Peaks or Channel Openings

We study the conductance $g$ of an electron interferometer created in a two dimensional electron gas between a nanostructured contact and the depletion region induced by the charged tip of a scanning gate microscope. Using non-interacting models, we study the beating pattern of interference fringes exhibited by the images giving $g$ as a function of the tip position when a parallel magnetic field is applied. The analytical solution of a simplified model allows us to distinguish between two cases: (i) If the field is applied everywhere, the beating of Fabry-P\'erot oscillations of opposite spins gives rise to interference rings which can be observed at low temperatures when the contact is open between spin-split transmission resonances. (ii) If the field acts only upon the contact, the interference rings cannot be observed at low temperatures, but only at temperatures of the order of the Zeeman energy. For a contact made of two sites in series, a model often used for describing an inversion-symmetric double-dot setup, a pseudo-spin degeneracy is broken by the inter-dot coupling and a similar beating effect can be observed without magnetic field at temperatures of the order of the interdot coupling. Eventually, numerical studies of a quantum point contact with quantized conductance plateaus confirm that a parallel magnetic field applied everywhere or only upon the contact gives rises to similar beating effects between spin-split channel openings.Comment: 11 pages, 17 figure

Absorbing/Emitting Phonons with one dimensional MOSFETs

We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate phonons, when electron transport is due to phonon-assisted hops between localized states. Shifting the nanowire conduction band with a metallic gate induces different behaviors. When the Fermi potential is located near the band center, a bias voltage gives rise to small local heat exchanges which fluctuate randomly along the nanowire. When it is located near one of the band edges, the bias voltage yields heat currents which flow mainly from the substrate towards the nanowire near one boundary of the nanowire, and in the opposite direction near the other boundary. This opens interesting perspectives for heat management at submicron scales: Arrays of parallel gated nanowires could be used for a field control of phonon emission/absorption.Comment: 9 pages, 11 figure

A numerical finite size scaling approach to many-body localization

We develop a numerical technique to study Anderson localization in interacting electronic systems. The ground state of the disordered system is calculated with quantum Monte-Carlo simulations while the localization properties are extracted from the ``Thouless conductance'' $g$, i.e. the curvature of the energy with respect to an Aharonov-Bohm flux. We apply our method to polarized electrons in a two dimensional system of size $L$. We recover the well known universal $\beta(g)=\rm{d}\log g/\rm{d}\log L$ one parameter scaling function without interaction. Upon switching on the interaction, we find that $\beta(g)$ is unchanged while the system flows toward the insulating limit. We conclude that polarized electrons in two dimensions stay in an insulating state in the presence of weak to moderate electron-electron correlations.Comment: 5 pages, 4 figure

Thermoelectric study of the time-dependent Resonant Level Model

We study the non-interacting time-dependent resonant level model mimicking a driven quantum dot connected through leads to two electronic reservoirs held at different temperatures and electrochemical potentials. Using a scattering approach, we provide analytical formulas of the time-dependent particle currents, heat currents, and input driving power under the wide-band limit approximation. We also derive Landauer formulas for the corresponding time-integrated quantities when the perturbation applied on the dot is of finite duration. Then, we focus on the case of a single square pulse, benchmark our analytical results against numerical ones that are valid beyond the wide-band limit, and perform numerical simulations for a smooth square pulse and a periodic square pulse train. Finally, we discuss whether the efficiency of the device in a stationary Seebeck configuration can be enhanced by driving the dot potential. We find numerically that the transient increase of the efficiency observed in some cases is eventually cancelled out at long times.Comment: 11 pages, 6 figures, 1 appendix; final version as publishe

Scanning Gate Microscopy of Kondo Dots: Fabry-Pérot Interferences and Thermally Induced Rings

5 pages, 4 figuresWe study the conductance of an electron interferometer formed in a two dimensional electron gas between a nanostructured quantum contact and the charged tip of a scanning gate microscope. Measuring the conductance as a function of the tip position, thermally induced rings may be observed in addition to Fabry-Pérot interference fringes spaced by half the Fermi wavelength. If the contact is made of a quantum dot opened in the middle of a Kondo valley, we show how the location of the rings allows to measure by electron interferometry the magnetic moment of the dot above the Kondo temperature

The energy scale behind the metallic behaviors in low-density Si-MOSFETs

We show that the unexpected metallic behavior (the so-called two-dimensional metal-insulator transition) observed in low-density Silicon metal-oxide-semiconductor field-effect transistors (Si-MOSFETs) is controlled by a unique characteristic energy scale, the polarization energy. On one hand, we perform Quantum Monte Carlo calculations of the energy needed to polarize the two dimensional electron gas at zero temperature, taking into account Coulomb interactions, valley degeneracy and electronic mobility (disorder). On the other hand, we identify the characteristic energy scale controlling the physics in eight different sets of experiments. We find that our {\it ab-initio} polarization energies (obtained without any adjustable parameters) are in perfect agreement with the observed characteristic energies for all available data, both for the magnetic field and temperature dependence of the resistivities. Our results put strong constraints on possible mechanisms responsible for the metallic behavior. In particular, there are strong indications that the system would eventually become insulating at low enough temperature.Comment: two references added, corrected typos, minor changes, final version as publishe

Using Activated Transport in Parallel Nanowires for Energy Harvesting and Hot Spot Cooling

12 pages, 8 figures, 4 appendicesInternational audienceWe study arrays of parallel doped semiconductor nanowires in a temperature range where the electrons propagate through the nanowires by phonon assisted hops between localized states. By solving the Random Resistor Network problem, we compute the thermopower $S$, the electrical conductance $G$, and the electronic thermal conductance $K^e$ of the device. We investigate how those quantities depend on the position -- which can be tuned with a back gate -- of the nanowire impurity band with respect to the equilibrium electrochemical potential. We show that large power factors can be reached near the band edges, when $S$ self-averages to large values while $G$ is small but scales with the number of wires. Calculating the amount of heat exchanged locally between the electrons inside the nanowires and the phonons of the environment, we show that phonons are mainly absorbed near one electrode and emitted near the other when a charge current is driven through the nanowires near their band edges. This phenomenon could be exploited for a field control of the heat exchange between the phonons and the electrons at submicron scales in electronic circuits. It could be also used for cooling hot spots

Gate-modulated thermopower of disordered nanowires: II. Variable-range hopping regime

International audienceWe study the thermopower of a disordered nanowire in the field effect transistorconfiguration. After a first paper devoted to the elastic coherent regime (Bosisio R., Fleury G.and Pichard J.-L. 2014 New J. Phys. 16 035004), we consider here the inelastic activated regimetaking place at higher temperatures. In the case where charge transport is thermally assisted byphonons (Mott Variable Range Hopping regime), we use the Miller-Abrahams random resistornetwork model as recently adapted by Jiang et al. for thermoelectric transport. This approachpreviously used to study the bulk of the nanowire impurity band is extended for studying itsedges. In this limit, we show that the typical thermopower is largely enhanced, attaining valueslarger that 10 kB/e ∼ 1 mV K−1 and exhibiting a non-trivial behaviour as a function of thetemperature. A percolation theory by Zvyagin extended to disordered nanowires allows us toaccount for the main observed edge behaviours of the thermopower